Характеристики
Transistor Type IGBT
Transistor Polarity N
Voltage, Vces 600V
Current Ic Continuous a Max 340A
Voltage, Vce Sat Max 1.9V
Case Style SEMITRANS 3
Collector-to-Emitter Breakdown Voltage 600V
Current Ic Continuous b Max 240A
Current Ic av 340A
Current, Icm Pulsed 300A
External Depth 61.4mm
Fixing Centres 93mm
Fixing Hole Diameter 5.4mm
SMD Marking SEMITRANS 3
Temperature, Current 25°C
Time, Rise 48ns
Transistors, No. of 2
Width, External 105mm
Voltage 600V