Характеристики
Product Category
IGBT Modules
Manufacturer
Infineon
RoHS
No
Product
IGBT Silicon Modules
Configuration
Hex
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Continuous Collector Current at 25 C
325 A
Gate-Emitter Leakage Current
400 nA
Pd — Power Dissipation
1.15 kW
Package Case
EconoPACK+
Maximum Operating Temperature
+ 125 C
Packaging
Tray
Brand
Infineon Technologies
Height
17 mm
Length
162 mm
Maximum Gate Emitter Voltage
+- 20 V
Minimum Operating Temperature
— 40 C
Mounting Style
Screw
Factory Pack Quantity
4
Width
150 mm