Характеристики
GD10PJK120L1S оригинальный IGBT/DC-DC изоляционный силовой модуль/электронный компонент
GD10PJK120L1S IGBT Module
GD10PJK120L1S IGBT Module
DIODE-rectifier TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol Description GD10PJK120L1S Units
VRRM Collector-Emitter Voltage @ Tj=25℃ 1600 V
IF(AV) Average On-state Current @ TC=100℃ 12 A
I RMSM
Maximum RMS Current at Rectifier Output
@ TC=80℃ 25 A
IFSM Surge Forward Current VR=0V,tp=10ms,Tj=45℃ 150 A
t-value,VR=0V,tp=10ms,Tj=150℃ 250 A2
Characteristics Values
Symbol Parameter Test Conditions Min. Typ. Max. Units
Tj=25℃ 1.11
VF
Diode Forward
Voltage
IF=7A
Tj=150℃ 1.01
V
IR Reverse Current Tj=150℃,VR=1600V 0.7 mA